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2SA1343 PDF预览

2SA1343

更新时间: 2024-11-19 21:55:39
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
5页 333K
描述
PNP /NPN EPITAXIAL PLANAR SILICON TRANSISTORS

2SA1343 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 0.5
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SA1343 数据手册

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Switching Applications(with Bias Resistance)