Datasheet > 2SA1338-AL5

2SA1338-AL5

更新时间： 2024-11-21 01:06:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1511K
描述
PNP Transistors

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获取价格

数据手册

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2SA1338-AL5 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1338

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Adoption of FBET process.

High breakdown voltage : VCEO=-50V.

Large current capacitiy and high fT.

Ultrasmall-sized package permitting sets

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

to be smallsized, slim.

1.Base

● Complementary to 2SC3392

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

-50

-5

-500

Collector current (pulse)

Collector dissipation

I^CP

-800

P^C

200

Jumction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-60

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -40 V , I

EB= -4V , I

=-100 mA, I

= -100 mA, I

CE= -5V, I = -10mA

-100

0.4

=- 10mA

= -10mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

0.15

0.8

1.2

stg

100

560

Turn-on time

400

CC=-20V,I

C=-10|B1=-10|B2=100mA

Storage time

Fall time

Common base output capacitance

Transition frequency

CB= -10V

CE= -10V

5.6

200

,f=1MHz

, I

C= -50mA

MHz

■ Classification of hfe

Type

Range

Marking

2SA1338-AL4

100-200

AL4

2SA1338-AL5

140-280

AL5

2SA1338-AL6

200-400

AL6

2SA1338-AL7

280-560

AL7

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