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2SA1338-6 PDF预览

2SA1338-6

更新时间: 2024-01-09 21:41:42
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 46K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SOT-23VAR

2SA1338-6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.68最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):200
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SA1338-6 数据手册

 浏览型号2SA1338-6的Datasheet PDF文件第2页浏览型号2SA1338-6的Datasheet PDF文件第3页浏览型号2SA1338-6的Datasheet PDF文件第4页浏览型号2SA1338-6的Datasheet PDF文件第5页 
Ordering number : ENN1421B  
SANYO Sem iconductors  
DATA S HEET  
PNP/NPN Epitaxial Planar Silicon Transistor  
2SA1338 / 2SC6080  
High-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Adoption of FBET process.  
· High breakdown voltage : V  
· Large current capacitiy and high f .  
· Ultrasmall-sized package permitting sets to be small-  
sized, slim.  
=(–)50V.  
CEO  
2018B  
T
[2SA1338/2SC3392]  
0.4  
0.16  
3
0 to 0.1  
0.95  
0.95  
2
1
1.9  
2.9  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : CP  
( ) : 2SA1338  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
(–)60  
(–)50  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
(–)5  
V
EBO  
I
(–)500  
(–)800  
200  
mA  
mA  
mW  
˚C  
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
=(–)40V, I =0  
E
=(–)4V, I =0  
C
(–)0.1  
(–)0.1  
560*  
µA  
µA  
CBO  
CB  
EB  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
EBO  
h
=(–)5V, I =(–)10mA  
100*  
FE  
C
* : The 2SA1338/2SC3392 are classified by 10mA h as follows :  
Continued on next page.  
FE  
Rank  
4
5
6
7
h
100 to 200 140 to 280 200 to 400 280 to 560  
FE  
Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY  
rank : 4, 5, 6, 7  
h
FE  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT No.1421-1/5  

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