Datasheet > 2SA1338-6

2SA1338-6

更新时间： 2024-11-20 21:07:11

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
5页	46K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SOT-23VAR

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2SA1338-6 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

2SA1338-6 数据手册

Ordering number : ENN1421B

2SA1338/2SC3392

SANYO Sem iconductors

DATA S HEET

PNP/NPN Epitaxial Planar Silicon Transistor

2SA1338 / 2SC6080

High-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Adoption of FBET process.

· High breakdown voltage : V

· Large current capacitiy and high f .

· Ultrasmall-sized package permitting sets to be small-

sized, slim.

=(–)50V.

CEO

2018B

[2SA1338/2SC3392]

0.4

0.16

0 to 0.1

0.95

1.9

2.9

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

( ) : 2SA1338

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)60

(–)50

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

(–)5

EBO

(–)500

(–)800

200

˚C

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)40V, I =0

=(–)4V, I =0

(–)0.1

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

EBO

=(–)5V, I =(–)10mA

100*

* : The 2SA1338/2SC3392 are classified by 10mA h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400 280 to 560

Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY

rank : 4, 5, 6, 7

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT No.1421-1/5

12 3 4 5

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与2SA1338-6相关器件

型号	品牌	获取价格	描述	数据表
2SA1338-7	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SOT-23VAR
2SA1338-AL4	KEXIN	获取价格	PNP Transistors
2SA1338-AL5	KEXIN	获取价格	PNP Transistors
2SA1338-AL6	KEXIN	获取价格	PNP Transistors
2SA1338-AL7	KEXIN	获取价格	PNP Transistors
2SA1339	SANYO	获取价格	High-Speed Switching Applications
2SA1339R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SA1339S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SA1339T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SA1339U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK

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