SMD Type
Transistors
PNP Transistors
2SA1330-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High DC current gain.
High voltage.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
● Complementary to 2SC3360-HF
0.1
+0.1
-0.1
1.9
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-200
-200
-5
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
-100
200
mA
mW
Total power dissipation
Junction temperature
Storage temperature
PT
Tj
150
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-200
-200
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= -100 μA, I
Ic= -1 mA, I =0
= -100μA, I =0
CB= -200 V , I =0
EB= -5V , I =0
E=0
CEO
EBO
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
nA
V
I
C
Collector-emitter saturation voltage
*
V
CE(sat)
BE(sat)
I
I
C
=-50 mA, I
B
B
=- 5mA
=- 5mA
-0.21 -0.3
-0.8 -1.2
-0.6 -0.65 -0.7
Base - emitter saturation voltage
Base - emitter voltage *
*
V
C=-50 mA, I
V
BE
V
V
V
CE= -10V, I
CE= -10V, I
CE= -10V, I
C
= -10mA
= -10mA
=-50mA
C
C
90
50
200
195
0.16
1.3
450
h
h
FE(1)
FE(2)
DC current gain *
Turn-on time
tr
V
C
CC=-10V,VBE(off)=2.5V
IB2=-1.0mA
us
Storage time
ts
I
=-10mA,IB1
=
Turn-off time
t
off
0.18
3.6
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -30V, I
CE= -10V, I
E
E
= 0,f=1MHz
= 10mA
pF
f
120
MHz
* Pulse test: tp
350 us; duty cycle
0.02.
■ Classification of hfe(1)
Type
Range
Marking
2SA1330-O5-HF 2SA1330-O6-HF 2SA1330-O7-HF
90-180 135-270 200-450
O5 O6 O7
F
F
F
1
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