2SA1320
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
High Voltage Switching Applications
Unit: mm
Color TV Chroma Output Applications
•
•
•
High voltage: V
= −250 V
CEO
Low C : 1.8 pF (max)
re
Complementary to 2SC3333
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−250
−250
−5
V
V
V
Collector-emitter voltage
Emitter-base voltage
DC
I
−50
C
Collector current
mA
Pulsed
I
−100
−20
CP
Base current
I
mA
W
B
Collector power dissipation
Junction temperature
P
0.6
C
JEDEC
JEITA
TO-92
T
150
°C
°C
j
SC-43
Storage temperature range
T
stg
−55~150
TOSHIBA
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −200 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
⎯
⎯
⎯
⎯
−0.1
−0.1
⎯
μA
μA
V
CBO
CB
EB
E
I
= −5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
DC current gain
V
I
= −1 mA, I = 0
−250
50
⎯
C
B
h
V
= −20 V, I = −25 mA
⎯
⎯
FE
CE
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= −10 mA, I = −1 mA
⎯
⎯
−1.5
⎯
V
V
CE (sat)
C
B
V
V
V
V
= −20 V, I = −25 mA
⎯
−0.75
80
BE
CE
CE
CB
C
Transition frequency
f
= −10 V, I = −10 mA
60
⎯
MHz
pF
T
C
Reverse transfer capacitance
C
= −30 V, I = 0, f = 1 MHz
⎯
⎯
1.8
re
E
1
2007-11-01