Datasheet > 2SA1307

2SA1307

更新时间： 2024-11-25 22:45:03

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器输出元件
页数	文件大小	规格书
1页	73K
描述
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

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数据手册

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2SA1307 数据手册

2SA1307

PNP EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

VERTICAL DEFLECTION OUTPUT

SC-67

! Complement to 2SC3299

ABSOLUTE MAXIMUM RATINGS (T_A=25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Symbol

Rating

Unit

VCBO

V^CEO

V^EBO

I^C

P^C

T^j

-60

-50

-5

℃

150

-50~150

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS (T_A=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

Test Condition

Min

Typ

Max

Unit

I^CBO

I^EBO

h^FE1

V^CE(sat)

F^t

V^CB= -150V , I^E=0

V^EB= -5V , I^C=0

V^CE= -1.0V ,I^C=-1.0A

I^C=-3A ,I^B=-0.15mA

V^CE= -10V ,I^C=-0.5A

-10

240

-0.4

µA

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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2SA1309AR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, S TYPE