Datasheet > 2SA1306Y

2SA1306Y

更新时间： 2024-01-03 02:30:44

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	106K
描述
Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1306Y 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SA1306/A/B

DESCRIPTION

·Good Linearity of h_FE

·High Collector-Emitter Breakdown Voltage-

_(BR)CEO= -160V(Min)-2SA1306

= -180V(Min)-2SA1306A

= -200V(Min)-2SA1306B

·Complement to Type 2SC3298/A/B

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

-160

-180

-200

-160

-180

-200

-5

UNIT

2SA1306

Collector-Base

Voltage

V_CBO

2SA1306A

2SA1306B

2SA1306

Collector-Emitter

Voltage

V_CEO

2SA1306A

2SA1306B

V_EBO

Emitter-Base Voltage

I_C

Collector Current-Continuous

Base Current-Continuous

-1.5

I_B

-0.15

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

下载PDF

与2SA1306Y相关器件

型号	品牌	描述	获取价格	数据表
2SA1307	Wing Shing	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)	获取价格
2SA1307	SAVANTIC	Silicon PNP Power Transistors	获取价格
2SA1307	JMNIC	Silicon PNP Power Transistors	获取价格
2SA1307	ISC	Silicon PNP Power Transistors	获取价格
2SA1307	NJSEMI	Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1	获取价格
2SA1307O	TOSHIBA	TRANSISTOR 5 A, 50 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	获取价格