Datasheet > 2SA1281

2SA1281

更新时间： 2024-09-26 14:53:31

品牌	Logo	应用领域
先科 - SWST		/
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5页	903K
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2SA1281 数据手册

2SA1281

PNP Silicon Epitaxial Planar Power Transistor

Features

• The transistor is subdivided into two groups,

O and Y according to its DC current gain

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Applications

• For Power switching and AF amplifier

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Current

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient

1 / 5

Dated : 13/09/2023 CL Rev：02

12 3 4 5

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与2SA1281相关器件

型号	品牌	获取价格	描述	数据表
2SA1282	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1282	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO
2SA1282-11-E	MITSUBISHI	获取价格	暂无描述
2SA1282-11-F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1282A-11-E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282AE	ISAHAYA	获取价格	暂无描述
2SA1282AF	ISAHAYA	获取价格	Transistor