Datasheet > 2SA1279

2SA1279

更新时间： 2024-11-25 06:19:03

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	40K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SA1279 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA1279

DESCRIPTION

·With TO-220F package

·Low collector saturation voltage

APPLICATIONS

·High current switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-5

I_CM

Collector current-peak

Collector dissipation

Junction temperature

Storage temperature

-8

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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与2SA1279相关器件

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2SA1282	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1282	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO
2SA1282-11-E	MITSUBISHI	获取价格	暂无描述
2SA1282-11-F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE