2SA1276O

更新时间： 2024-11-25 13:04:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
5页	135K
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中文翻译

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2SA1276O 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1276

DESCRIPTION

·With TO-220 package

·Complement to type 2SC3230

·Good linearity of h_FE

APPLICATIONS

·General purpose applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-30

UNIT

Open emitter

Open base

-30

Open collector

-5

-3

I_E

Emitter current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4 5

中文翻译

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