Datasheet > 2SA1252-D4

2SA1252-D4

更新时间： 2024-11-22 01:06:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	921K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1252-D4 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1252

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High VEBO.

Wide ASO and high durability against breakdown.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

● Complementary to 2SC3134

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

-50

-15

-150

Collector current (pulse)

Collector dissipation

I^CP

-300

P^C

200

Jumction temperature

Storage temperature

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-60

-50

-15

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

E=0

Ic= -1 mA，I

= 0

= -100μA，

CB= -40 V , I

EB= -10V , I

CBO

EBO

-0.1

-0.5

-1.2

600

C=0

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC forward current gain

CE(sat)

BE(sat)

=-50 mA, I

=-5mA

=-50 mA, I

B=-5mA

hFE

CE= -6V, I

CB= -6V, f=1MHz

CE= -6V, I = -1mA

C= -1mA

Collector output capacitance

Transition frequency

3.5

100

MHz

■ Classification of hfe

Type

Range

Marking

2SA1252-D4

90-180

2SA1252-D5

135-270

2SA1252-D6

200-400

2SA1252-D7

300-600

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