Datasheet > 2SA1242Y(TO-251)

2SA1242Y(TO-251)

更新时间： 2024-11-28 15:25:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	124K
描述
Transistor

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数据手册

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2SA1242Y(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1242Y(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/252 Plastic-Encapsulate Transistors

2SA1242 TRANSISTOR (PNP)

TO-251

TO-252-2L

FEATURES

Strobe Flash Applications Medium Power Amplifier Applications

1 2 3

Excellent h_FElinearity

1. BASE

: h_{FE (1)}= 100 to 320 (V_CE= −2 V, I_C= −0.5 A)

: h_{FE (2)}= 70 (min) (V_CE= −2 V, I_C= −4 A)

Low collector saturation voltage

2. COLLECTOR

3. EMITTER

: V_{CE (sat)}= −1.0 V (max) (I_C= −4 A, I_B= −0.1 A)

High power dissipation

: P_C= 10 W (Tc = 25°C), P_C= 1.0 W (Ta = 25°C)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

-35

-20

-8

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-5

P_C

℃

T_J

150

Storage Temperature

-55 to +150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-35

-20

-8

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100uA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100uA, I_C=0

I_CBO

I_EBO

V_CB=-35V, I_E=0

V_EB=-8V, I_C=0

-100

320

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-2V, I_C=-0.5A

V_CE=-2V, I_C=-4A

100

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-4A, I_B=-0.1A

-1

V_CE=-2V, I_C=-4A

-1.5

Transition frequency

f_T

V_CE=-2V, I_C=-0.5A

V_CB=-10V, I_E=0,f=1MH_Z

170

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

160-320

Range

中文翻译

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