Datasheet > 2SA1203

2SA1203

更新时间： 2024-11-19 14:55:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1464K
描述
SOT-89-3L

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数据手册

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2SA1203 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SA1203

TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

Complementary to 2SC2883

Small Flat Package

Audio Frequency Amplifier Application

3. EMITTER

MARKING

HO1

HY1

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-30

Unit

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-5

Collector Current

-1.5

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -1mA,I_E=0

Min

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-30V,I_E=0

-100

320

-2

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-500mA

I_C=-1.5A,I_B=-30mA

V_CE=-2V, I_C=-500mA

V_CB=-10V,I_E=0, f=1MHz

V^CE=-2V,I^C= -500mA

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Collector output capacitance

Transition frequency

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

100–200

160–320

HY1

HO1

MARKING

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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2SA1203TE12L	TOSHIBA	获取价格	TRANSISTOR 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
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2SA1203YTE12L	TOSHIBA	获取价格	TRANSISTOR 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign