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2SA1201 PDF预览

2SA1201

更新时间: 2024-10-15 18:10:03
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 538K
描述
SOT-89

2SA1201 数据手册

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2SA1201  
BIPOLAR TRANSISTOR (PNP)  
FEATURES  
Complementary to 2SC2881  
High voltage  
High transition frequency  
Surface Mount device  
SOT-89  
MECHANICAL DATA  
Case: SOT-89  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.055 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-120  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-120  
V
Emitter-Base Voltage  
-5  
V
Collector Current  
-800  
mA  
mW  
°C/W  
°C  
Collector Power Dissipation  
PC  
500  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
RθJA  
TJ  
250  
150  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
-
V(BR)CBO  
Collector-base breakdown voltage  
V
IC=-1mAIE=0  
120  
-
V(BR)CEO  
Collector-emitter breakdown voltage  
V
IC=-10mAIB=0  
120  
V(BR)EBO  
ICBO  
IEBO  
hFE  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
IE=-1mAIC=0  
-5  
V
-0.1  
-0.1  
240  
-1  
uA  
uA  
VCB=-120V, IE=0  
VEB=-5V, IC=0  
VCE=-5V, IC=-100mA  
DC current gain  
80  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
IC=-500mAIB=-50mA  
VCE=-5V,IC=-500mA  
-1  
Transition frequency  
fT  
120  
MHz VCE=-5V, IC=-100mA  
VCB=-10V, IE=0, f=1  
Collector output capacitance  
Cob  
30  
pF  
MHz  
CLASSIFICATION OF hFE  
Rank  
O
Y
Range  
80-160  
DO  
120-240  
DY  
Marking  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, HALOGE