Datasheet > 2SA1200O

2SA1200O

更新时间： 2024-09-22 23:19:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	116K
描述
TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| SOT-89

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中文翻译

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数据手册

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2SA1200O 数据手册

2SA1200

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)

2SA1200

High Voltage Switching Applications

Unit: mm

High voltage: V

= −150 V

CEO

High transition frequency: f = 120 MHz (typ.)

Small flat package

= 1 to 2 W (mounted on ceramic substrate)

Complementary to 2SC2880

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−150

−5

CBO

CEO

EBO

−50

−10

500

Base current

PW-MINI

JEDEC

Collector power dissipation

―

800

(Note 1)

JEITA

SC-62

2-5K1A

Junction temperature

150

°C

TOSHIBA

Storage temperature range

−55 to 150ꢀ

stg

Weight: 0.05 g (typ.)

Note 1: 2SA1200 mounted on ceramic substrate (250 mm²× 0.8 t)

2002-08-19

12 3 4 5

中文翻译

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