2SA1186P

更新时间： 2024-01-05 14:28:03

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
1页	26K
描述
Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1186P 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SA1186P 数据手册

LAP T 2 S A1 1 8 6

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)

Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

External Dimensions MT-100(TO3P)

Symbol

I^CBO

2SA1186

Symbol

2SA1186

Conditions

Unit

µA

Unit

±0.2

4.8

±0.4

15.6

±0.1

2.0

–100max

–150min

50min

9.6

V^CBO

VCEO

VEBO

V^CB=–150V

–150

IEBO

V^EB=–5V

–150

V(BR)CEO

hFE

I^C=–25mA

–5

±0.1

ø3.2

V^CE=–4V, IC=–3A

I^C=–5A, IB=–0.5A

V^CE=–12V, IE=1A

V^CB=–80V, f=1MHz

–10

VCE(sat)

–2.0max

60typ

MHz

–2

100(Ta=25°C)

150

°C

COB

110typ

+0.2

-0.1

+0.2

-0.1

Tstg

–55 +150

1.05

0.65

1.4

hFE Rank O(50 100), P(70 140), Y(90 180)

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Type No.

VCC

(V)

(Ω)

(A)

VB2

(V)

IB1

(mA)

IB2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–60

–5

–500

500

0.25typ

0.8typ

0.2typ

–10

–8

–6

–4

–2

–10

–8

–3

–2

–1

–6

IC=–10A

–4

–2

–5A

–1

–2

–3

–4

–0.5

–1.0

–1.5

–2.0

–1

Base-Emittor Voltage V^BE(V)

–2

Collector-Emitter Voltage VCE(V)

Base Current IB(A)

–

^j-at Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=–4V)

300

200

125˚C

25˚C

Typ

100

–30˚C

0.5

–0.02

0.2

–0.5

–5

–0.1

–0.5

–1

–5

–10

100

Time t(ms)

1000 2000

–0.1

–1

–10

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

100

–30

–10

–5

–1

Without Heatsink

Natural Cooling

–0.5

Without Heatsink

3.5

–0.2

–2

–10

–100

–200

0.02

0.1

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current I^E(A)

下载PDF

与2SA1186P相关器件

型号	品牌	描述	获取价格	数据表
2SA1186Y	ISC	Transistor	获取价格
2SA1187	SAVANTIC	Silicon PNP Power Transistors	获取价格
2SA1187	ISC	Silicon PNP Power Transistors	获取价格
2SA1187	JMNIC	Silicon PNP Power Transistors	获取价格
2SA1187	NJSEMI	Trans GP BJT PNP 150V 10A 3-Pin(3+Tab) TO-3P	获取价格
2SA1188	RENESAS	Silicon PNP Epitaxial	获取价格