Datasheet > 2SA1179

2SA1179

更新时间： 2024-11-14 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	60K
描述
High breakdown voltage Collector-base voltage VCBO -55 V

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2SA1179 数据手册

Product specification

2SA1179

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High breakdown voltage

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

Rating

-55

Unit

-50

-5

-150

200

Collector dissipation

Jumction temperature

Storage temperature

150

Tstg

-50 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

VCBO

VCEO

VEBO

ICBO

Testconditons

Min

-55

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

IC = -10ìA , IE = 0A

IC = -1mA , RBE =

IE = -10ìA , IC = 0A

VCB = -35V , IE = 0A

VEB = -4V , IC = 0

-0.1

400

-0.5

-1.0

Emitter cutoff current

IEBO

DC current Gain

hFE

VCE = -6V , IC = -1mA

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

Output capacitance

VCE(sat) IC = -50mA , IB = -5mA

VBE(sat) IC = -50mA , IB = -5mA

Cob

VCB = -6V , IE=0 ,f = 1MHz

VCE = -6V , IC = -10mA

4.0

Transition frequency

180

MHz

Marking

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