Datasheet > 2SA1171-E

2SA1171-E

更新时间： 2024-11-15 02:55:39

品牌	Logo	应用领域
科信 - KEXIN		光电二极管
页数	文件大小	规格书
2页	725K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1171-E 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1171

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low frequency small signal amplifier

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-90

Unit

-90

-5

-50

Collector power dissipation

Junction temperature

P^C

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-90

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= -100 uA， I

Ic= -1 mA，RBE=∞

= -100μA， I =0

CB= -75 V , I =0

E=0

CEO

EBO

CBO

EBO

-0.5

-0.1

-0.5

-1.2

-0.75

800

EB= -5 V , I

=-10 mA, I

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

CE(sat)

BE(sat)

=-1mA

=-10 mA, I

CE=-12V,I

CB= -25 V , I

=-2 mA

=-2mA

=0, f=1MHz

DC current transfer ratio

250

Collector output capacitance

Transition frequency

1.6

200

MHz

CE=-12V,

■ Classification of hfe

Type

Range

Marking

2SA1171-D

250-500

2SA1171-E

400-800

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