Datasheet > 2SA1170

2SA1170

更新时间： 2024-11-14 05:56:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	130K
描述
Silicon PNP Power Transistors

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中文翻译

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2SA1170 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1170

DESCRIPTION

·With MT-200 package

·High power dissipation

·Complement to type 2SC2774

APPLICATIONS

·Audio and general purpose applications

PINNING (see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

-200

-6

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-17

I_B

Base current

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

ꢀ

T_j

150

T_stg

-55~150

ꢀ

12 3

中文翻译

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