2SA1120

更新时间： 2024-01-06 14:58:08

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	139K
描述
Silicon PNP Power Transistors

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2SA1120 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1120

DESCRIPTION

·With TO-126 package

·High transition frequency

·Low collector saturation voltage

APPLICATIONS

·Audio power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

-35

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-35

Open collector

-6

-5

I_B

Base current

-1

1.5

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55～+150

12 3

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