Datasheet > 2SA1104

2SA1104

更新时间： 2024-10-13 22:45:03

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	83K
描述
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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2SA1104 数据手册

Silicon Epitaxial Planar Transistor

2SA1104

GENERAL DESCRIPTION

Silicon PNP high frequency, high power transistors

in a plastic envelope, primarily for use in audio and

general purpose

MT-100

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

PARAMETER

CONDITIONS

TYP

MAX

120

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

I_CM

P_tot

V_CEsat

V_F

t_f

1.5

T_mb25

I_C= 3.5A; I_B= 0.35A

I_F= 3.5A

2.0

Fall time

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

MIN

MAX

120

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

I_B

P_tot

Total power dissipation

Tmb 25

Storage temperature

-55

150

T_stg

T_j

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

V_CB=100V

TYP

MAX

0.2

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

V_EB=5V

0.2

I_C=1mA

120

I_C= 3.5A; I_B= 0.35A

I_C= 3A; V_CE= 5V

I_C= 1A; V_CE= 12V

V_CB= 10V

300

250

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

C_c

t_on

Tum-off storage time

t_s

Fall time

t_f

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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