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2SA1048-Y(TPE4) PDF预览

2SA1048-Y(TPE4)

更新时间： 2024-11-21 14:46:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 226K
描述
Small Signal Bipolar Transistor

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中文翻译

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2SA1048-Y(TPE4) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.65
Base Number Matches：1

2SA1048-Y(TPE4) 数据手册

 浏览型号2SA1048-Y(TPE4)的Datasheet PDF文件第2页浏览型号2SA1048-Y(TPE4)的Datasheet PDF文件第3页 
2SA1048(L)  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1048(L)  
Audio Frequency Amplifier Applications  
Unit: mm  
Low Noise Audio Frequency Applications  
•
•
•
•
•
•
Small package.  
High voltage: V  
= −50 V (min)  
CEO  
High h  
h
= 70~400  
FE: FE  
Excellent h  
linearity: h  
(I = −0.1 mA)/h  
(I = −2 mA) = 0.95 (typ.)  
FE C  
FE  
FE  
C
Low noise: NF = 0.2dB (typ.), 3dB (max)  
Complementary to 2SC2458 (L).  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−150  
−50  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
―
―
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
TOSHIBA  
2-4E1A  
T
j
125  
Weight: 0.13 g (typ.)  
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
70  
⎯
400  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
⎯
80  
⎯
−0.1  
⎯
−0.3  
⎯
V
CE (sat)  
C
B
f
V
V
V
= −10 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
4
7
ob  
E
= −6 V, I = −0.1 mA, f = 100 Hz,  
C
NF (1)  
NF (2)  
⎯
⎯
0.5  
0.2  
6
3
R
= 10 kΩ  
G
Noise figure  
dB  
V
R
= −6 V, I = −0.1 mA, f = 1 kHz,  
CE  
C
= 10 kΩ  
G
Note: h classification O: 70~140, Y: 120~240, GR: 200~400  
FE  
1
2007-11-01  
123

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