2SA1048-O

更新时间： 2024-11-21 13:04:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体音频放大器小信号双极晶体管
页数	文件大小	规格书
3页	397K
描述
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1048-O 技术参数

生命周期：	Transferred	包装说明：	2-4E1A, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.41	Is Samacsys：	N
最大集电极电流 (IC)：	0.15 A	集电极-发射极最大电压：	50 V
配置：	SINGLE	最小直流电流增益 (hFE)：	70
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

2SA1048-O 数据手册

2SA1048

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1048

Audio Frequency Amplifier Applications

Unit: mm

•

Small package

High voltage: V

= −50 V (min)

CEO

High h

= 70~400

FE: FE

Excellent h

linearity: h

(I = −0.1 mA)/h

(I = −2 mA) = 0.95 (typ.)

FE C

Low noise: NF = 1dB (typ.), 10dB (max)

Complementary to 2SC2458

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−150

−50

°C

Base current

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

−0.1

μA

CBO

= −5 V, I = 0

EBO

(Note)

DC current gain

= −6 V, I = −2 mA

⎯

400

Collector-emitter saturation voltage

Transition frequency

= −100 mA, I = −10 mA

⎯

−0.1

⎯

−0.3

⎯

CE (sat)

= −10 V, I = −1 mA

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

= −6 V, I = −0.1 mA, f = 1 kHz,

Noise figure

⎯

1.0

= 10 kΩ

Note: h classification O: 70~140, Y: 120~240, GR: 200~400

2007-11-01

12 3

中文翻译

下载PDF

与2SA1048-O相关器件

型号	品牌	获取价格	描述	数据表
2SA1048Y	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SPAK
2SA1048-Y	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
2SA1048-Y(TPE4)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SA1048-Y-AP	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1048-Y-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1048-Y-BP	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1048-Y-BP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA1049	TOSHIBA	获取价格	TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
2SA1049	SWST	获取价格	功率三极管
2SA1049_07	TOSHIBA	获取价格	Audio Frequency Amplifier Applications

与2SA1048-O相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1048-O

2SA1048-O 技术参数

2SA1048-O 数据手册

与2SA1048-O相关器件

与2SA1048-O相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1048-O

2SA1048-O 技术参数

2SA1048-O 数据手册

与2SA1048-O相关器件

与2SA1048-O相关文章

您还可以找

您在本页遇到什么问题？