Datasheet > 2SA1048

2SA1048

更新时间： 2023-12-06 20:01:34

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	619K
描述
双极型晶体管

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2SA1048 数据手册

2SA1048

TO-92S Transistor (PNP)

1. EMITTER

TO-92S

2. COLLECTOR

3. BASE

1 2 3

Features

High voltage: V_CEO=-50V(Min.)

High h_FE: h_FE=70~400

Low noise: NF=1dB(Typ.),10dB(Max.)

Complementary to 2SC2458

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-50

Units

Dimensions in inches and (millimeters)

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.15

0.2

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100 μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-100 μA, I_C=0

V_CB=-50 V, I_E=0

V_EB=-5 V, I_C=0

μA

-0.1

400

-0.3

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-6 V, I_C=-2mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-100mA, I_B=-10mA

V_CE=-10 V, I_C=-1mA

V_CB=-10 V, I_E=0, f=1 MHz

V_CE=-6 V, I_C=-0.1 mA,

f=1 KH_Z, Rg=10 KΩ

MHz

Collector output capacitance

C_ob

Noise figure

CLASSIFICATION OF h_FE

Rank

200-400

70-140

120-240

Range

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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