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2SA1037Q PDF预览

2SA1037Q

更新时间: 2024-11-21 20:33:11
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 2494K
描述
Transistor

2SA1037Q 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):0.15 A配置:Single
最小直流电流增益 (hFE):120最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SA1037Q 数据手册

 浏览型号2SA1037Q的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
2SA1037 TRANSISTOR (PNP)  
3
FEATURES  
1
Excellent hFE linearity.  
Complments the 2SC2412  
1. BASE  
2
2. EMITTER  
3. COLLECTOR  
MARKING : FQ, FR, FS  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
-60  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-6  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
mA  
mW  
PC  
200  
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol Test conditions  
V(BR)CBO IC=-50μA,IE=0  
V(BR)CEO IC=-1mA,IB=0  
V(BR)EBO IE=-50μA,IC=0  
Min  
-60  
-50  
-6  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
ICBO  
IEBO  
hFE  
VCB=-60V,IE=0  
-0.1  
-0.1  
560  
-0.5  
μA  
μA  
Emitter cut-off current  
VEB=-6V,IC=0  
DC current gain  
VCE=-6V,IC=-1mA  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=-50mA,IB=-5mA  
VCE=-12V,IC=-2mA,f=30MHz  
VCB=-12V,IE=0,f=1MHz  
V
140  
4.0  
MHz  
pF  
Collector output capacitance  
Cob  
5.0  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
120 - 270  
180 - 390  
270 - 560  
A,May,2011  

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