Datasheet > 2SA1037M1PT

2SA1037M1PT

更新时间： 2024-11-18 06:22:39

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	360K
描述
General Purpose PNP Transistor

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2SA1037M1PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SA1037M1PT

SURFACE MOUNT

General Purpose PNP Transistor

VOLTAGE 50 Volts CURRENT 0.15 Ampere

APPLICATION

* Small Power Amplifier .

FEATURE

* Small surface mounting type. (FBPT-723)

* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA)

* Low cob. Cob=4.0pF(Typ.)

FBPT-723

0.5±0.05

* PC= 150mW (Collector power dissipation).

1.2±0.05

CONSTRUCTION

1.2±0.05

* PNP Silicon Transistor

* Epitaxial planner type

0.05±0.04

0.84±0.05

0.32±0.05

0.15(REF.)

0.47(REF.)

(3)

(2)

(1)

(2)

0.23(REF.)

CIRCUIT

0.28±0.05

(1)

0.25±0.05

0.22±0.05

Dimensions in millimeters

FBPT-723

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-60

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-50

-6

Volts

mAmps

Open Collector

-150

150

Collector Power Dissipation

Storage Temperature

Junction Temperature

TA ≤ 25^OC

PTOT

TSTG

-55

+150

^oC

2007-01

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

12 3

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