SMD Type
Transistors
PNP Transistors
2SA1036-HF (2SA1036K-HF)
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Large IC. ICMax. = -500mA
Low VCE(sat). Ideal for low-voltage operation.
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current *
-32
V
-5
V
-0.5
A
Collector power dissipation
Junction temperature
Storage temperature
PC
0.2
W
Tj
150
Tstg
-55 to +150
* PC max. must not be exceeded.
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA, I =0
= -100μA, I
Min
-40
-32
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
I
CBO
EBO
V
V
CB= -20 V , I
E
=0
-100
-100
-0.4
-1.2
390
nA
V
I
EB= -4V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
B
=-1mA
=-1mA
V
C=-100mA, I
h
FE
V
V
V
CE= -3V, I
CB= -10V, I
CE= -5V, I =- 20mA,f=100MHz
C
= -10mA
82
Output capacitance
C
ob
T
E
= 0,f=1MHz
7
pF
Transition frequency
f
E
200
MHz
hFE Classification
Type
Range
Marking
2SA1036/K-P-HF2SA1036/K-Q-HF2SA1036/K-R-HF
82-180 120-270 180-390
HP HQ HR
F
F
F
1
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