SMD Type
Transistors
PNP Transistors
2SA1036 (2SA1036K)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Large IC. ICMax. = -500mA
Low VCE(sat). Ideal for low-voltage operation.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-32
V
-5
V
Collector current *
-0.5
A
Collector power dissipation
Junction temperature
Storage temperature
PC
0.2
W
Tj
150
Tstg
-55 to +150
* PC max. must not be exceeded.
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-40
-32
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA, I =0
= -100μA, I
E=0
B
I
E
C=0
I
CBO
EBO
V
V
CB= -20 V , I
E
=0
-100
-100
-0.4
-1.2
390
nA
V
I
EB= -4V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
B
=-1mA
=-1mA
V
C
=-100mA, I
h
FE
V
V
V
CE= -3V, I
CB= -10V, I
CE= -5V, I =- 20mA,f=100MHz
C= -10mA
82
Output capacitance
C
ob
T
E
= 0,f=1MHz
7
pF
Transition frequency
f
E
200
MHz
hFE Classification
Type
Range
Marking
2SA1036/K-P
82-180
2SA1036/K-Q
120-270
HQ
2SA1036/K-R
180-390
HR
HP
1
www.kexin.com.cn