Datasheet > 2SA1036

2SA1036

更新时间： 2023-12-06 20:02:57

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	651K
描述
SOT-23

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数据手册

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2SA1036 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SA1036 TRANSISTOR (PNP)

FEATURES

∙ Large I_C. _ICMax.= -500 mA

∙ Low V_CE(sat). Ideal for low-voltage operation.

1. BASE

2. EMITTER

3. COLLECTOR

MARKING : HP, HQ, HR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

-40

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-32

-5

Collector Current -Continuous

Collector Power Dissipation

-500

200

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

Min

-40

-32

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-1

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-3V,I_C=-10mA

I_C=-100mA,I_B=-10mA

V_CE=-5V,I_C=-20mA,f=100MHz

V_CB=-10V,I_E=0,f=1MHz

390

-0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

200

MHz

Collector output capacitance

C_ob

CLASSIFIC ATION OF h

Rank

Range

82 - 180

120 - 270

180 - 390

www.jscj-elec.com

Rev. - 2.0

12 3 4

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