SMD Type
TransistIoCrs
PNP Transistors
2SA1035-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
● Low noise voltage NV.
1
2
● High foward current transfer ratio hFE
● Complementary to 2SC2406-HF.
.
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-55
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current
-55
V
-5
V
-50
mA
mA
mW
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
-100
200
PC
Tj
150
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -2 mA, I =0
= -100μA, I =0
Min
-55
-55
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
I
CBO
CEO
V
V
V
CB= -50 V , I
CE= -40 V , I
EB= -5V , I
E
B
=0
=0
-100
-1
nA
uA
nA
I
EBO
C
=0
-100
-0.6
-1.2
-1.0
700
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-100 mA, I
B
B
=-10mA
=-10mA
V
V
C=-100 mA, I
V
BE
V
V
V
BE=-1V, I
CE= -5V, I
CE = –10V, I
= 100kΩ , Function = FLAT
CB= -5V, I = -2mA,f=200MHz
C
=-100mA
= -2mA
= –1mA, GV = 80dB
DC current gain
h
FE
C
180
C
Noise voltage
NV
150
mV
R
g
Transition frequency
f
T
V
E
200
MHz
■ Classification of hfe
Type
Range
Marking
2SA1035-R-HF
2SA1035-S-HF
260-520
2SA1035-T-HF
360-700
180-360
HR
F
HS
F
HT
F
1
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