Datasheet > 2SA1012R-CH

2SA1012R-CH

更新时间： 2023-12-06 20:06:17

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	792K
描述
功率三极管

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2SA1012R-CH 数据手册

2SA1012R-CH

PNP Silicon Epitaxial Planar Power Transistor

Features

• AEC-Q101 Qualified

• The transistor is subdivided into two group,

O and Y, according to its DC current gain.

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Applications

• For power switching and amplifier applications

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Power Dissipation

T_C= 25

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

8.3

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

62.5

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 31/08/2023 Rev:01

12 3 4 5

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