Datasheet > 2SA1012

2SA1012

更新时间： 2024-11-19 14:53:47

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数据手册

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2SA1012 数据手册

2SA1012-HAF

PNP Silicon Epitaxial Planar Power Transistor

The transistor is subdivided into two group, O and

Y, according to its DC current gain.

Features

1.Base 2.Collector 3.Emitter

TO-220FB Plastic Package

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

• For high current switching applications

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Power Dissipation

T_C= 25

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

R_θJA

1 / 5

Dated: 21/06/2023 Rev: 04

12 3 4 5

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