Datasheet > 2SA1012

2SA1012

更新时间： 2024-11-18 06:18:31

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
1页	111K
描述
Silicon PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1012 数据手册

Power Transistors

www.jmnic.com

2SA1012

Silicon PNP Transistors

ꢀFeatures

B C E

﹒With TO-220 package

﹒Complementary to 2SC2562

ꢀAbsolute Maximum Ratings Tc=25

SYMBOL

V_CBO

V_CEO

V_EBO

I_B

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Base current

RATING

-60

UNIT

-50

-5

I_C

Collector current

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

-55~150

TO-220

ꢀElectrical Characteristics Tc=25

Typ

SYMBOL

PARAMETER

Collector-base cut-off current

Emitter-base cut-off current

CONDITIONS

V_CB=-50V; I_E=0

MIN

MAX

-1

UNIT

I_CBO

I_EBO

V_EB=-5V; I_C=0

-1

I_CEO

V_CBO

Collector-emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V_(BR)ceo

I_C=-10mA;I_B=0

-50

V_EBO

Emitter-base breakdown voltage

V_CE(sat-1)

Collector-emitter saturation voltages

I_C=-8A; I_B=-0.15A

-0.2

-0.9

-0.4

V_CE(sat-2)

h_FE-1

Collector-emitter saturation voltages

Forward current transfer ratio

Base-emitter saturation voltages

Collector Output Capacitance

Transition frepuency

I_C=-1A; V_CE=-1V

I_C=-3A; V_CE=-1V

I_C=-8A; I_B=-0.15A

240

-1.2

h_FE-2

V_BE(sat)1

V_BE(sat)2

C_OB

V_CB=-10V; I_E=0;f=1MHz

I_C=-1A; V_CE=-4V

f_T

MHz

中文翻译

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2SA1012_10	UTC	获取价格	HIGH CURRENT SWITCHING APPLICATION
2SA1012B	CJ	获取价格	TO-252-2L
2SA1012G-O-TA3-T	UTC	获取价格	Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SA1012G-O-TF3-T	UTC	获取价格	Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SA1012G-O-TN3-R	UTC	获取价格	Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
2SA1012G-O-TN3-T	UTC	获取价格	Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
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