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2SA1012 PDF预览

2SA1012

更新时间: 2024-11-18 05:56:31
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 114K
描述
isc Silicon PNP Power Transistor

2SA1012 数据手册

 浏览型号2SA1012的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SA1012  
DESCRIPTION  
·Low Collector Saturation Voltage  
:VCE(sat)= -0.4(V)(Max)@IC= -3A  
·High Switching Speed  
·Complement to Type 2SC2562  
APPLICATIONS  
·Designed for high current switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-60  
UNIT  
V
-50  
V
-5  
V
Collector Current-Continuous  
-5  
A
Total Power Dissipation  
@ TC=25℃  
PC  
25  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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