Datasheet > 2PB709ASW

2PB709ASW

更新时间： 2024-11-30 12:32:31

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	72K
描述
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).

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2PB709ASW 数据手册

Product specification

2PB709AW

Features

High collector current (max. 100 mA).

Low collector-emitter saturation voltage (max. 500 mV).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-45

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

-45

-6

Collector current

-100

Peak collector current

I^CM

-200

Total power dissipation

Storage temperature

P^tot

200

T^stg

T^j

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

T^amb

R^{th j-a}

-65 to +150

625

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

-10

-5

Unit

Collector cut-off current

I^CBO

I^EBO

h^FE

I^E= 0; V^CB= -45 V

ìA

I^E= 0; V^CB= -45 V; T^j= 150

I^C= 0; V^EB= -5 V

Emitter cut-off current

-10

DC current gain

2PB709AQW

2PB709ARW

2PB709ASW

160

210

290

260

340

460

I^C= -2 mA; V^CE= -10 V

Collector-emitter saturation voltage

Collector capacitance

V^CE(sat)I^C= -100 mA; I^B= -10 mA; *

-500

C^c

I^E= ie = 0; V^CB= -10 V; f = 1 MHz

Transition frequency

2PB709AQW

f^T

I^C= -1 mA; V^CE= -10 V;f = 100 MHz

MHz

2PB709ARW

2PB709ASW

* Pulse test: tp

300 ìs; ä 0.02.

hFE Classification

TYPE

2PB709AQW

2PB709ARW 2PB709ASW

Marking

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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