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2PB709AQW

更新时间: 2024-11-29 12:32:31
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 72K
描述
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).

2PB709AQW 数据手册

  
Product specification  
2PB709AW  
Features  
High collector current (max. 100 mA).  
Low collector-emitter saturation voltage (max. 500 mV).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
-45  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
-45  
V
-6  
V
Collector current  
-100  
mA  
mA  
mW  
Peak collector current  
ICM  
-200  
Total power dissipation  
Storage temperature  
Ptot  
200  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Tamb  
Rth j-a  
-65 to +150  
625  
K/W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
-10  
-5  
Unit  
nA  
Collector cut-off current  
ICBO  
IEBO  
hFE  
IE = 0; VCB = -45 V  
ìA  
nA  
IE = 0; VCB = -45 V; Tj = 150  
IC = 0; VEB = -5 V  
Emitter cut-off current  
-10  
DC current gain  
2PB709AQW  
2PB709ARW  
2PB709ASW  
160  
210  
290  
260  
340  
460  
IC = -2 mA; VCE = -10 V  
Collector-emitter saturation voltage  
Collector capacitance  
VCE(sat) IC = -100 mA; IB = -10 mA; *  
-500  
5
mV  
pF  
Cc  
IE = ie = 0; VCB = -10 V; f = 1 MHz  
Transition frequency  
2PB709AQW  
60  
70  
80  
fT  
IC = -1 mA; VCE = -10 V;f = 100 MHz  
MHz  
2PB709ARW  
2PB709ASW  
* Pulse test: tp  
300 ìs; ä 0.02.  
hFE Classification  
TYPE  
2PB709AQW  
N5  
2PB709ARW 2PB709ASW  
Marking  
N7  
N9  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1 of 1  

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