Datasheet > 2NP09

2NP09

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	296K
描述
Complementary MOSFET

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中文翻译

获取价格

数据手册

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2NP09 数据手册

SMD Type

MOSFET

N-Ch and P-Ch MOSFET

2NP09

■ Features

● N-Channel

PDFN5x6-8A

DS = 40V

= 32A

R_DS(ON)< 16mΩ

● P-Channel

DS = -40V

= -22A

R_DS(ON)< 30mΩ

Top View

● Advanced high cell density Trench technology

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● 100% EAS Guaranteed

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

N-Channel P-Channel

Unit

±20

-40

±20

-22

-17

-41

Gate-Source Voltage

=25℃

Continuous Drain Current (Note 1)

=100℃

Pulsed Drain Current (Note 2)

IDM

Single Pulse Avalanche Energy (Note 3)

Maximum Power Dissipation (Note 4)

Thermal Resistance, Junction- to-Ambient (Note 1)

Thermal Resistance, Junction- to-Case (Note 1)

Junction Temperature

TC=25℃

θJA

θJC

℃/W

150

℃

Storage Temperature Range

Tstg

-55 to 150

Notes 1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A.

4. The power dissipation is limited by 150℃ junction temperature.

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