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2NP05

更新时间: 2024-10-15 18:09:55
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
10页 481K
描述
Complementary MOSFET

2NP05 数据手册

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SMD Type  
MOSFET  
Complementary Trench MOSFET  
2NP05  
DFN2X2-6  
Ƶ Features  
8
N-Channel  
ƽ VDS (V) = 20V  
ƽ ID = 4.5 A (VGS = 4.5V)  
7
ƽ RDS(ON) ˘ 29m¡ (VGS = 4.5V)  
ƽ RDS(ON) ˘ 34m¡ (VGS = 2.5V)  
ƽ RDS(ON) ˘ 44m¡ (VGS = 1.8V)  
ƽ RDS(ON) ˘ 65m¡ (VGS = 1.5V)  
P-Channel  
1.S1  
5.G2  
6.D1  
7.D1  
8.D2  
2.G1  
3.D2  
4.S2  
ƽ VDS (V) = -20V  
ƽ ID = -4.5 A (VGS = -4.5V)  
ƽ RDS(ON) ˘ 61m¡ (VGS = -4.5V)  
ƽ RDS(ON) ˘ 81m¡ (VGS = -2.5V)  
ƽ RDS(ON) ˘ 115m¡ (VGS = -1.8V)  
ƽ RDS(ON) ˘ 170m¡ (VGS = -1.5V)  
S
2
D
1
G
2
G
1
S
1
D
2
N-Channel MOSFET P-Channel MOSFET  
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Symbol  
N-Channel  
P-Channel  
Unit  
V
Drain-Source Voltage  
VDS  
GS  
20  
-20  
Gate-Source Voltage  
V
f8  
4.5  
4.5  
4.5  
4.5  
20  
-4.5  
-4.5  
-4.3  
-3.8  
-15  
T
T
T
T
C
=25ć  
=70ć  
C
Continuous Drain Current  
ID  
A
A
=25ć  
=70ć  
A
Pulsed Drain Current  
Power Dissipation  
I
DM  
6.5  
5
T
T
T
T
C
=25ć  
=70ć  
C
P
D
W
1.9  
1.2  
65  
A
=25ć  
=70ć  
A
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
thJA  
thJC  
t İ 5s  
ć/W  
16  
R
150  
T
J
ć
Storage Temperature Range  
-55 to 150  
T
stg  
1
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