Datasheet > 2NP04

2NP04

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
10页	279K
描述
Complementary MOSFET

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中文翻译

获取价格

数据手册

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2NP04 数据手册

SMD Type

MOSFET

Silicon P,N Channel MOSFET

2NP04

Ƶ Features

SOP-8

Unit:mm

ƽ Low drain-source ON-resistance:

P Channel R_DS(ON)= 38m¡(typ.)(V_GS=-10V)

N Channel R_DS(ON)= 38mȍ(typ.)(V_GS=10V)

ƽ High forward transfer admittance:

P Channel |Yfs| = 7.3S (typ.)

0.15

1.50

N Channel |Yfs| = 8S (typ.)

1㸬Source1

2㸬Gate1

5㸬Drain2

6㸬Drain2

7㸬Drain1

8㸬Drain1

ƽ Low leakage current:

3㸬Source2

4㸬Gate2

P Channel I_DSS= -10ȝA(max)(V_DS=-30V)

N Channel I_DSS= 10ȝA(max)(V_DS=30V)

ƽ Enhancement mode:

P Channel V_th= -0.8 to -2.0 V (V_DS= -10V, I_D= -1mA)

N Channel V_th= 1.3 to 2.5 V (V_DS= 10V, I_D= 1mA)

Ƶ Absolute Maximum Ratings Ta = 25ć

Circuit Configuration

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 k

)

DGR

GSS

(Note 1)

−4

Drain

current

Pulse

−16

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

1.48

1.23

0.58

0.36

1.48

1.23

0.58

0.36

D (1)

Marking (Note 6)

Single-device value at

dual operation (Note 3b)

D (2)

D (1)

D (2)

(Note 2a)

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

Single-device value at

dual operation (Note 3b)

(Note 2b)

Single pulse avalanche energy

(Note 4)

2.6

8404

Avalanche current

−2

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.009

150

Channel temperature

°C

Storage temperature range

−55 to 150

stg

Note: For Notes 1 to 5, refer to the next page.

www.kexin.com.cn

12 3 4 5 6 7...10

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