Datasheet > 2N930

2N930

更新时间： 2024-11-07 02:57:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	57K
描述
NPN LOW POWER SILICON TRANSISTOR

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数据手册
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2N930 数据手册

TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 253

Devices

Qualified Level

JAN

2N930

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Units

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

6.0

Vdc

mAdc

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

300

600

P_T

Operating & Storage Junction Temperature Range

-55 to +200

⁰C

T_J_,T

stg

TO- 18*

(TO-206AA)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

qJC

1) Derate linearly 2.0 mW/⁰C above T_A= +25⁰C

2) Derate linearly 4.0 mW/⁰C above T_C= +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= +25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Collector-Base Cutoff Current

V_CB= 60 Vdc

Symbol

V_(BR)CEO

I_CBO

Min.

Max.

Unit

Vdc

mAdc

hAdc

V_CB= 45 Vdc

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

V_EB= 5.0 Vdc

mAdc

hAdc

I_EBO

5.0

Collector-Emitter Cutoff Current

V_CE= 45 Vdc

Collector-Base Cutoff Current

V_CE= 5.0 Vdc

I_CES

I_CEO

hAdc

2.0

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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2N930 替代型号

型号	品牌	替代类型	描述	数据表
BC640	ONSEMI	功能相似	High Current Transistors

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