是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.4 |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N870LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N871 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,TO-18 | |
2N871 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N871LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N876 | BOCA |
获取价格 |
SCRs (Silicon Controlled Rectifiers) | |
2N876 | CENTRAL |
获取价格 |
0.8 to 110 Amperes RMS 15 to 1200 Volts | |
2N876 | DIGITRON |
获取价格 |
SILICON CONTROLLED RECTIFIER,15V V(DRM),350MA I(T),TO-18 | |
2N876LEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 0.8A I(T)RMS, 15V V(RRM), 1 Element, TO-18 | |
2N877 | CENTRAL |
获取价格 |
0.8 to 110 Amperes RMS 15 to 1200 Volts | |
2N877 | BOCA |
获取价格 |
SCRs (Silicon Controlled Rectifiers) |