Datasheet > 2N7002V

2N7002V

更新时间： 2024-04-09 19:01:25

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	638K
描述
0.3A, 60V, 0.35W, N Channel, Small Signal MOSFETs

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2N7002V 数据手册

N-Channel Enhancement Mode MOSFET

2N7002V

Features



Advanced trench cell design

Extremely low threshold voltage

Typical Applications



N-channel enhancement mode effect transistor

Mechanical Data



Case: SOT-23

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

SOT-23

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

2N7002V

SOT-23

3000 pcs / Tape & Reel

7002V

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation ^*1

300

250

I_D

200

I_DM

E_AS

P_D

2000

0.11

0.35

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 to +150

°C

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case^*1

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

217

319

230

357

°C /W

MTM0219A: August 2023 [2.1]

www.gmesemi.com

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