5秒后页面跳转
2N7002T PDF预览

2N7002T

更新时间: 2024-10-15 18:09:55
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 1085K
描述
N-Channel MOSFET

2N7002T 数据手册

 浏览型号2N7002T的Datasheet PDF文件第2页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2N7002T  
SOT-523  
Unit: m m  
1.6 +-00..11  
1.0 +-00..11  
0.2-+00..0055  
0.15±0.05  
2
1
Features  
VDS (V) = 60V  
ID = 115mA  
3
RDS(ON) 5Ω (VGS = 10V)  
RDS(ON) 7Ω (VGS = 5V)  
0.3±0.05  
+0.1  
-0.1  
0.5  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
60  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
±20  
115  
Continuous Drain Current  
Power Dissipation  
I
D
mA  
mW  
/W  
P
D
150  
Thermal Resistance.Junction- to-Ambient  
Junction Temperature  
RthJA  
833  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
Gate Threshold Voltage  
Symbol  
Test Conditions  
Min  
60  
Typ  
Max  
Unit  
V
V
DSS  
I
D
=250μA, VGS=0V  
DS=60V, VGS=0V  
DS=0V, VGS=±20V  
I
DSS  
GSS  
V
V
V
V
V
V
V
80  
±80  
2.5  
5
nA  
nA  
V
I
V
GS(th)  
1
DS=VGS , I  
GS=10V, I  
GS=5V, I  
D=250μA  
D=500mA  
Static Drain-Source On-Resistance  
RDS(O  
n)  
Ω
D=50mA  
7
On State Drain Current  
Forward Transconductance  
Input Capacitance  
I
D(ON)  
FS  
iss  
oss  
rss  
GS=10V, VDS=7V  
DS=10V, I =0.2A  
500  
80  
mA  
mS  
g
D
C
50  
25  
V
GS=0V, VDS=25V, f=1MHz  
pF  
ns  
V
Output Capacitance  
C
Reverse Transfer Capacitance  
Turn-On DelayTime  
C
5
t
d(on)  
d(off)  
20  
V
R
DD = 25V, I  
D = 0.5A, VGEN= 10V  
L
= 50Ω, RGEN = 25Ω  
Turn-Off DelayTime  
t
40  
V
V
GS=10V, I  
D=500mA  
3.75  
0.375  
1.2  
Drain-source on-voltage  
Diode Forward Voltage  
Marking  
VDS(on)  
GS=5V, I =50mA  
D
V
SD  
Is=115mA, VGS=0 V  
0.55  
Marking  
K72  
1
www.kexin.com.cn  

与2N7002T相关器件

型号 品牌 获取价格 描述 数据表
2N7002-T MCC

获取价格

Transistor
2N7002-T NXP

获取价格

300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
2N7002T,215 NXP

获取价格

2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin
2N7002T/R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB
2N7002T_09 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002T_1 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002T_10 SECOS

获取价格

N-Channel Enhancement MOSFET
2N7002T_11 SECOS

获取价格

0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhance
2N7002T_12 UTC

获取价格

300mA, 60V N-CHANNEL POWER MOSFET
2N7002T_15 UTC

获取价格

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING