Datasheet > 2N7002T

2N7002T

更新时间： 2024-10-15 18:09:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	351K
描述
SOT-523

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获取价格

数据手册

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2N7002T 数据手册

2N7002T

N-CHANNEL MOSFET

FEATURES

 High density cell design for low R^DS(ON)

 Voltage controlled small signal switch

 Rugged and reliable

 High saturation current capability

MECHANICAL DATA

 Case: SOT-523

 Case material: Molded plastic. UL flammability 94V-0



Terminals: Solderable per MIL-STD-202, Method 208

Equivalent circuit

SOT-523

 Weight:0.002grams(approximate)

Marking: K72

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-source voltage

V^DS

V^GS

I^D

Gate-source voltage

±20

Drain current

115

℃/W

℃

Power dissipation

P^D

150

Thermal resistance from junction to ambient

Junction temperature

R^θJA

T^J

833

150

Storage temperature

T^STG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Drain-source breakdown voltage

Gate-threshold voltage

Gate-body leakage

Symbol

V(^BR)DSS

V^th(GS)

l^GSS

Min

Max Unit

Conditions

V^GS=0V, I^D=250μA

2.5

V^DS=VGS, I^D=250μA

±80

nA V^DS=0V, V^GS=±20V

nA V^DS=60V,V^GS=0V

mA V^GS=10V, V^DS=7 V

Zero gate voltage drain current

On-state drain current

I^DSS

I^D(ON)

500

V^GS=10V, I^D=500mA

Drain-source on-resistance

Forward trans conductance

Drain-source on-voltage

R^DS(on)

g^fs

V^GS=5V, I^D=50mA

ms V^DS=10V, I^D=200mA

3.75

0.375

1.2

V^GS=10V, I^D=500mA

V^DS(on)

V^GS=5V, I^D=50mA

Diode forward voltage

Input capacitance

V^SD

C^iss

C^oss

C^rss

0.55

I^S=115mA, V^GS=0V

Output capacitance

pF V^DS=25V,V^GS=0V, f=1MHz

V^DD=25V,R^L=50Ω

Reverse transfer capacitance

Turn-on time

Turn-off time

t^d(on)

t^d(off)

I^D=500mA,V^GEN=10V

R^G=25Ω

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