Datasheet > 2N7002K_0711

2N7002K_0711

更新时间： 2022-09-16 16:03:19

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	242K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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2N7002K_0711 数据手册

2N7002K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering & Date Code Information: See Page 3

Weight: 0.008 grams (approximate)

Drain

•

Qualified to AEC-Q101 Standards for High Reliability

SOT-23

Gate

ESD protected up to 2kV

TOP VIEW

Gate

Protection

Diode

TOP VIEW

Source

EQUIVALENT CIRCUIT

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±20

V_GSS

Drain Current (Note 1)

Continuous

Pulsed (Note 3)

300

800

I_D

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

350

Units

°C/W

°C

P_d

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

357

R_θ

-65 to +150

T_j,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol Min

Typ Max Unit

Test Condition

V_GS= 0V, I_D= 10μA

⎯

BV_DSS

I_DSS

⎯

1.0

±10

μA V_DS= 60V, V_GS= 0V

μA V_GS= ±20V, V_DS= 0V

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

⎯

1.6

2.5

V_GS(th)

R_{DS (ON)}

|Y_fs|

V_DS= 10V, I_D= 1mA

V_GS= 10V, I_D= 0.5A

V_GS= 5V, I_D= 0.05A

V_DS=10V, I_D= 0.2A

⎯

2.0

3.0

Static Drain-Source On-Resistance

Forward Transfer Admittance

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

C_iss

C_oss

C_rss

⎯

V_DS= 25V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

5.0

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

November 2007

2N7002K

Document number: DS30896 Rev. 3 - 2

12 3 4

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