Datasheet > 2N7002

2N7002

更新时间： 2023-12-06 20:10:47

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	883K
描述
2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure an

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2N7002 数据手册

2N7002

N-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

The 2N7002 is a low-threshold, Enhancement-mode

(normally-off) transistor that uses a vertical DMOS

structure and a well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

• Low C_ISSand Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

Package Type

3-lead SOT-23

(Top view)

DRAIN

SOURCE

GATE

See Table 3-1 for pin information.

 2018 Microchip Technology Inc.

DS20005797A-page 1

12 3 4 5 6 7...14

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