Datasheet > 2N7002

2N7002

更新时间： 2024-10-15 14:52:03

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
2页	907K
描述
场效应晶体管

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中文翻译

获取价格

技术参数
数据手册

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2N7002 技术参数

极性：	N channel	Pd(W)：	0.2
V(BR)DS_min(V)：	60	ID_max(A)：	0.115
Rds_max(Ω）：	7.5	@VGS(V)：	10
VTH(GS)：	1~2.5	PACKAGE：	SOT-23
class：	Transistors

2N7002 数据手册

2N7002

Mosfet (N-Channel)

SOT-23

1. GATE

2. SOURCE

3. DRAIN

Features

High density cell design for low R_DS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Drain-Source voltage

Drain Current

Value

Units

V_DS

I_D

115

℃

P_D

T_J

Power Dissipation

Junction Temperature

Storage Temperature

225

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

V_(BR)DSS

V_th(GS)

l_GSS

V_GS=0 V, I_D=10 μA

V_DS=V_GS, I_D=250 μA

V_DS=0 V, V_GS=±25 V

V_DS=60 V, V_GS=0 V

V_GS=10 V, V_DS=7 V

V_GS=10 V, I_D=500mA

V_GS=5 V, I_D=50mA

V_DS=10 V, I_D=200mA

V_GS=10V, I_D=500mA

V_GS=5V, I_D=50mA

2.5

±80

Gate-body Leakage

Zero Gate Voltage Drain Current

On-state Drain Current

I_DSS

I_D(ON)

500

7.5

500

3.75

0.375

1.2

Drain-Source On-Resistance

Forward Trans conductance

Drain-source on-voltage

r_DS(0n)

g_fs

Ω

0.5

0.05

0.55

V_DS(on)

Diode Forward Voltage

Input Capacitance

V_SD

C_iss

I_S=115mA, V_GS=0 V

V_DS=25V, V_GS=0V, f=1MHz

Output Capacitance

C_OSS

C_rSS

Reverse Transfer Capacitance

SWITCHING TIME

t_d(on)

t_d(off)

V_DD=25 V, R_L=50Ω

I_D=500mA,V_GEN=10 V

R_G=25 Ω

Turn-on Time

Turn-off Time

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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