Datasheet > 2N7002

2N7002

更新时间： 2024-01-09 05:14:41

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	43K
描述
N-Channel MOSFET

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技术参数
数据手册

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2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2N7002

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High density cell design for low RDS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta=25

Parameter

Drain-Source voltage

Drain Current

Symbol

V^DS

I^D

Rating

Unit

115

Power Dissipation

P^D

225

Junction Temperature

Storage Temperature

T^J

150

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

Min

Typ

Max

Unit

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage

VGS=0 V, ID=10 µA

VDS=60 V, VGS=0 V

VDS=0 V, VGS= 25 V

VDS=VGS, ID=250 µA

V^GS=10 V, ID=500 mA

V^GS=5 V, ID=50 mA

VGS=10 V, VDS=7 V

VDS=10 V, ID=200 mA

l^GSS

Gate-threshold voltage

V^GS(th)

2.5

7.5

Drain-source on-resistance

r^DS(0n)

On-state drain current

Forward tran conductance

Input capacitance

I^D(on)

g^ts

500

C^iss

VDS=25 V, VGS=0 V, f=1 MHz

Output capacitance

C^OSS

C^rSS

Reverse transfer capacitance

VDD=25 V, RL=50

ID=500 mA,VGEN=10 V

R^G=25

Turn-on Time

Turn-off Time

t^d(0n)

t^d(off)

V^DS(on)

V^SD

V^GS=10V, ID=500mA

V^GS=5V, ID=50mA

IS=115 mA, VGS=0 V

0.5

3.75

0.375

1.2

Drain-source on-voltage

Diode forward voltage

0.05

0.55

Marking

702

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