Datasheet > 2N7000

2N7000

更新时间： 2024-12-02 18:09:35

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描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2N7000 数据手册

SMD Type

MOSFET

N-Channel Enhancement Mode MOSFET

2N7000

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

■ Features

0.4_-0.1

● High density cell design for low RDS(ON)

● Voltage controlled small signal switch

● Rugged and reliable

● High saturation current capability

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

1.Gate

2.Emitter

2.Soruce

3.Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source voltage

Symbol

VDS

Rating

Unit

Gate-Source Voltage

VGS

±20

Drain Current - Continuous

- Pulsed Note(1)

200

500

Power dissipation

@ TA = 25℃

0.4

Operating and storage junction temperature range

TJ, Tstg

-55 to +150

℃

Notes: 1. Pulse width limited by maximum junction temperature.

■ Electrical Characteristics Ta = 25℃

Test conditons

Parameter

Symbol

V(BR)DSS

VGS(th)

lGSS

Min

Typ Max

Unit

Drain-source breakdown voltage

Gate-threshold voltage

Gate-body leakage

VGS=0 V, ID=10 μA

VDS=VGS, ID=1mA

0.8

2.1

±100

VDS=0 V, VGS=±20 V

μA

Zero gate voltage drain current

On-state drain current

IDSS

VDS=48 V, VGS=0 V

1000

TC = 125℃

VGS=4.5 V, VDS=10 V

ID(ON)

0.35 0.075

VGS=10 V, ID=500 mA

VGS=4.5 V, ID=75 mA

VDS=10 V, ID=200 mA

Drain-source on-resistance

RDS(on)

5.3

Forward tran conductance

Input capacitance

gts

100

Ciss

VDS=25 V, VGS=0 V, f=1 MHz

Output capacitance

Reverse transfer capacitance

Turn-on Time

Coss

Crss

td(on)

td(off)

VDD = 15 V, RL = 25 Ω

ID =0.5 A, VGEN = 10 V, RG = 25Ω

Turn-off Time

■ Marking

Marking

702

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