是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.62 | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
参考标准: | CECC | 表面贴装: | NO |
端子面层: | NOT SPECIFIED | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6847EPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
2N6847PBF | INFINEON |
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Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
2N6848 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5.5A I(D) | TO-205AF | |
2N6849 | SEME-LAB |
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P.CHANNEL POWER MOSFETs | |
2N6849 | MICROSEMI |
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P-CHANNEL MOSFET | |
2N6849 | INFINEON |
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-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packag | |
2N6849 | NJSEMI |
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P-CHANNEL ENHANCEMENT MOSFET | |
2N6849_09 | MICROSEMI |
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P-CHANNEL MOSFET | |
2N6849E | INFINEON |
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Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
2N6849EA | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |